ReRAM memory based on dropcast PVA nano composite

A resistive switching memory behavior has been observed in PVA incorporated with Aluminium doped Zinc Oxide (AZO) nano particles drop cast on Alumiuium tape. An ON/OFF ratio of about 4 orders of magnitude encourages and leads to the development of ReRAM memory cell. The conduction mechanisms of different segments before and after switching has indicated a clear change of activation energies involved.