TDMOS-an ultra-low on-resistance power transistor

The authors report a trench sidewall channel double-diffused MOS transistor (TDMOS) with specific on-resistance of active <80 m Omega -mm/sup 2/, the lowest value reported to date. A novel five-mask process was used to fabricate the trench sidewall channel MOS transistor. The specific on-resistance of a typical device for active area is 75 m Omega -mm/sup 2/, with a threshold voltage of 2.8 V and subthreshold slope of 195 mV/decade. The drain-to-source breakdown voltage is 52 V. Two-dimensional simulation of electric field in the off-state and carrier flow in the on-state has been carried out, and design considerations have been determined.<
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