Preparation and ferroelectric properties of graded Pb(Ti/sub x/Zr/sub 1-x/)O/sub 3/ thin films

Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ (x=0/spl divide/0.8) graded thin films were fabricated by sol-gel method on Pt/SiO/sub 2//Si substrates using metal alkoxide solution. The samples were crystallized by conventional thermal annealing in air for 30 min. at 700/spl deg/C. The ferroelectric properties of the graded structure were investigated. Specific unusual behavior in the ferroelectric loops like large offset on the polarization axis was observed and discussed.