The analytic models for temperature dependence of the breakdown voltage of 6H- and 4H-SiC rectifiers

In this paper, the temperature dependence of the breakdown voltage of 6H-SiC and 4H-SiC rectifiers was modeled in both nonreachthrough diode (NRD) and reachthrough diode (RD). The breakdown voltage analysis was based on the ionization integral by accurate hole impact ionization coefficient and seventh order approximation. SiC rectifiers exhibited a positive temperature coefficient in breakdown voltage which is adequate for high temperature applications. The breakdown voltage was increased by M(T)/sup -1/4/ in NRDs and M(T)/sup -18/ in RDs both in 6H- and 4H-SiC.