A RF MOSFET SPICE model with a new substrate network

A modified BSIM3v3 RF model including a new substrate network with divided junction capacitances is proposed to account for the substrate effect. The superiority of the model over several conventional models is demonstrated by observing good agreements between measured and modeled S-parameters up to 10 GHz. In order to verify the accuracy of modeling the output dispersion effect, modeled data of the effective drain-source resistance and capacitance for the new substrate network are compared with those for previously reported networks.