0.24-um CMOS technology for Bluetooth power applications

This paper reports the experimental evaluation of a 0.24-um CMOS technology for the implementation of Bluetooth power amplifiers. From load-pull measurement, a 0.24-um NMOSFET of 2,000-um gate width can deliver 23-dBm output power with 45% drain efficiency for 2.5 V operation at 2.4 GHz. The cut-off frequency f/sub T/ and maximum oscillation frequency f/sub max/ are 25 GHz and 11 GHz, respectively. The measured drain-source breakdown voltage V/sub dso/ is 5 4 V. The maximum output power requirement of Bluetooth transmitters can be achieved by the 0.24-um CMOS power transistor.