Performance characterization of MOS and bipolar devices for the development of efficient and reliable electronic ballast

For increasing the efficiency of operation and improving the reliability, a suitable semiconductor device must be chosen for a ballast application to ensure minimum power dissipation. With extensive measurements and 2-D simulations, a careful trade-off is made between MOS and bipolar devices to establish guidelines for choosing semiconductor devices for next generation monolithic solid-state ballasts, as well as for high power rating ballasts.