Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor

This paper describes a novel design method for digital logic circuits based on the resonant-tunneling-heterojunction-bipolar-transistor (RTBT). Besides drift and diffusion, the RTBT uses tunneling as transport mechanism leading to an enhanced I-V characteristics. The particular properties of the RTBT are exploited in a monostable-bistable transition logic element (MOBILE) configuration. As a promising candidate for future nano-scale integration, the pseudo dynamic operation of the MOBILE is analyzed. In this connection the increased computational functionality of MOBILE based circuits keeps the complexity of the circuit low.