Effects of Coulomb and Roughness Scatterings on 4H-SiC MOSFET

4H-SiC n-channel MOSFET at 300 K has been studied by using SILVACO TCAD simulation. Based on the good agreements between measured and simulated output characteristics, the components of channel mobility versus gate voltage are clearly illustrated. From the simulation results, the channel mobility degradations due to interface traps under low gate voltage and surface roughness under high gate voltage are analyzed numerically.