AlSi/sub x/O/sub y/ as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSi/sub x/O/sub y/ in 193 nm lithography

Summary form only given. This paper reports the utilization of AlSi/sub x/O/sub y/ as a new high transmittance embedded material for AttPSM at 193 nm. AlSi/sub x/O/sub y/ thin films were formed by plasma sputtering of Al (140-170 W) and Si (50-70 W) under Ar and oxygen. Its refractive index n, extinction coefficient k, reflectance RX and transmittance TX at 193 nm could be manipulated and kept in the useful range for the high transmittance AttPSM.