GIDL Increase Due to HCI Stress: Correlation Study of MOSFET Degradation Parameters and Modelling for Reliability Simulation

This work presents a correlation study between gate-induced drain leakage (GIDL) increase and standard n-MOSFET degradation parameters (I
_Dlin
and I
_Dsat
) due to Hot Carrier Injection (HCI) both for SiON and SiO
₂
gate nodes. The same mechanism is responsible for the changes in these n-MOSFET parameters, so we propose the use of a unique HCI lifetime model, including the GIDL increase in accumulation. The GIDL parameter degradation can be implemented into aging models in CAD libraries along with the degradation models for standard n-MOSFET parameters. We also discuss model limitations for high-K metal gate (HKMG) devices.