Ultra-small MOSFETs: the importance of the full Coulomb interaction on device characteristics

We discuss a full three-dimensional model of an ultrasmall MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. Impurities within the device, including the source and drain regions, are treated as discrete charges and are randomly sited according to the nominal doping density of each region. We find that the inclusion of the proper Coulomb interaction significantly affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device.