Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

10-channel monolithic multiple wavelength electro-absorption (EA) modulators have been fabricated onto a single chip using a one-step quantum well intermixing technique based on As/sup 2+/ ion implantation through a graded thickness silicon dioxide mask. Each individual modulator has a dimension of 400/spl times/500 /spl mu/m/sup 2/, 50 /spl mu/m width of active window, 500 /spl mu/m cavity length and 20 /spl mu/m width of isolation trench. The EA intensity modulators were characterized at room temperature using end-fire-coupling technique. Samples used in this study had a InGaAs/InGaAsP MQW (five quantum wells) laser structure grown by metal-organic vapor phase epitaxy and were of the form of a stepped graded index heterostructure.