Analytical current conduction model for accumulation-mode SOI PMOS devices

Summary form only given. This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and pre-pinchoff velocity saturation gives an accurate prediction of the drain current characteristics.