Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes

In this paper, 600-V, 10-A TBJDs were fabricated utilizing a self-aligned trench process, and characterized experimentally. The static and dynamic characteristics of the TBJDs were investigated at both room and elevated temperatures. Compared to the p-i-n diode, the TBJDs were shown to have not only superior reverse recovery characteristics, but also lower on-state voltage drops and the same reverse leakage current levels at elevated temperature.