Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

We examined the effects of source/drain annealing condition on the gate sheet resistance and short channel effect. We found that two-step rapid thermal annealing (TS-RTA) technology, where 700/spl deg/C, 3 min pre-annealing in O/sub 2/ is introduced before 1000/spl deg/C anneal in N/sub 2/, suppressed dopant out-diffusion without degrading short channel effect of transistor.