A broadband 10 GHz track-and-hold in Si/SiGe HBT technology

This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes. Implemented in a 45 GHz BiCMOS Si/SiGe process, this IC consumes approximately 550 mW and can accommodate input voltages up to 600 mV. It has an IIP3 of 25.7 dBm with an input bandwidth in excess of 10 GHz.