An Enhanced DNW-enclosed NMOS in FinFET Technology for Latch-up Improvement

An embedded lightly-doped region (LDR) is proposed to suppress DNW-induced latch-up susceptibility reported in the previous study. The proposed structures in FinFET technology are investigated through TCAD simulations and experiments. LDR shows a significant holding voltage improvement as well as excellent hot-temperature immunity, which are hard to be achieved by conventional methods.