Effect of Annealing on the Structural and FMR Properties of Epitaxial Yig Thin Films Grown by RF Magnetron Sputtering

In the present work, we report the growth and microwave studies at different frequency of ~250 nm thick YIG film deposited on GGG (111) substrates by RF magnetron sputtering. (Edward Z400) at room temperature. The YIG film is deposited at an RF power of 100 W and in an argon atmosphere of 1.6 x10
^-2
mbar. The microwave properties have been investigated using a field-modulated broadband FMR in the frequency range 2-18 GHz. From the present investigations it is evident that the annealing helps in YIG phase formation as well as in reducing the stress, resulting a decrease in the FMR line width. Following a detailed analysis, a correlation between the microstructure and microwave properties has been established.