Negative differential resistance of InGaAs quantum wire FET

Negative differential resistance (NDR) with high peak to valley ratio (PVR) and low onset voltage (V/sub NDR/) are clearly observed in a quantum-wire field-effect transistor (QWR-FET) with the channel width of 100 nm, while it is not observed in a QWR-FET with the channel width of 300 nm. The saturation characteristics of Landau plots indicate that the 100 nm-width QWR has one-dimensional characteristics of electron transport, contrary to the 300 nm-width QWR which has two-dimensional electrons.