High f/sub T/, high current gain InP/InGaAs:C HBT grown by LP-MOVPE with non-gaseous sources

A compositionally graded base InP/InGaAs:C HBT is grown by LP-MOVPE with novel non-gaseous source configuration. The HBT devices with an emitter area of A/sub E/=20 /spl mu/m/sup 2/ were fabricated using a novel self-aligned two metalization step technology and an B-E-C contact configuration avoiding the emitter/base air-bridge. The HBTs exhibit simultaneously a current gain cut-off frequency of f/sub T/=149 GHz and very high dc current gain up to 400. These are record results regarding dc current gain at high transit frequency.