Continuous-wave operation of GaInNAs/GaAs lasers grown by chemical beam epitaxy

We have achieved a continuous-wave (cw) lasing operation of GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy (CBE) up to 90/spl deg/C. Lasing wavelength was 1.20 /spl mu/m at room temperature and the threshold current density was 1.6 kA/cm/sup 2/ for a 50 /spl mu/m width and 170 /spl mu/m-long device. A characteristic temperature T/sub 0/ of 150 K (10-90/spl deg/C, cw) was demonstrated. Temperature characteristics for different lasing wavelength were also investigated under pulsed condition. A 1.3 /spl mu/m laser still showed T/sub 0/ of 190 K (25-50/spl deg/C).