GaInAsN/AlGaAs distributed feedback laserdiodes at 1.3 /spl mu/m

GaInAsN quantum wells have been grown by MBE on GaAs for 1.3 /spl mu/m lasers. With room temperature PL the QWs are characterized and a record low FWHM of 29 meV at a wavelength of 1.34 /spl mu/m was achieved. These QWs are used in laser structures resulting in a threshold current density of 780 A/cm/sup 2/ for a DQW broad area device at 1.28 /spl mu/m with a dimension of 1000/spl times/100 /spl mu/m/sup 2/. SQW laser structures were processed to DFB lasers emitting around 1.3 /spl mu/m. Longitudinal single mode emission is achieved due to coupling of the laser mode to a chromium grating which is placed along the ridge waveguide.