Optical and structural properties of 1.3 /spl mu/m emitting InAs/GaAs quantum dots grown by LP-MOVPE as a function of the re-growth temperature

The optical and structural properties of a single array of 1.3 /spl mu/m emitting quantum dots (QDs) grown by LP-MOVPE are presented after different thermal treatments (between 570 and 670/spl deg/C under arsine flux during 25 min) simulating the overgrowth of the confinement layers for broad area lasers. The PL efficiency of the 1.3 /spl mu/m line is not affected by a thermal treatment below 620/spl deg/C. Nevertheless, a drastic decrease of the 1.3 /spl mu/m peak intensity occurs for higher anneal temperature (670/spl deg/C), together with an important blueshift of the PL spectrum (/spl ap/40 meV). The structural modifications of the QDs were studied by TEM, showing an indium diffusion from the dots within the surrounding layers. A low thermal budget (<620/spl deg/C) during the growth is clearly required to avoid the PL spectrum blueshift.