III-V materials integration technologies: wafer bonding approaches

Integration of III-V materials with either other III-V materials or with different materials such as silicon has become of increasing technological importance. Wafer bonding approaches will be discussed including bonding and thinning procedures with a special emphasis on hydrogen-implantation induced layer transfer ('smart-cut'). A wafer level technology developed at Research Triangle Institute will be described involving double-side processed 3" InP device layers using symmetrical intrinsic hetero-bipolar transistor (SIHBT) integrated circuits.