GaAs MESFET differential pass-transistor logic

Two GaAs MESFET implementations of differential pass-transistor logic (DPTL) are presented. The DPTL logic technique combines the area efficiencies and high operation speeds of ratioless pass-transistor circuits with the additional features of noise immunity and low power dissipation. Circuit structures are presented for both depletion (D)-mode and enhancement/depletion (E/D)-mode MESFET technologies, and are compared with buffered FET logic (BFL) and direct-coupled FET logic (DCFL), respectively. Experimental results are provided to verify the functionality and the performance features of both DPTL forms.<
>