A Novel Analysis to Reduce Leakage Current in Charge Plasma Based TFET

The article presents a new approach to analyse leakage current and power dissipation in the low power devices like charge plasma based TFET (CP-TFET). Dual metal control gate (DMG) with high-K dielectric at source/channel interface has been proposed in DMG-CP-TFET to reduce leakage current and standby power. Control gate electrode split into two electrodes CG1 = 4.5 eV and CG2 = 4 eV, lower workfunction of control gate2 (CG2) forms a quantum well near the source/channel junction, which offers more resistance in the path of tunneled charge carries from source to channel region. Which results suppressed OFF-state current (leakage) and low static power consumption. Apart from these, quantum well phenomenon makes DMG-CP-TFET more robust for temperature rise. More over, the device reliability for length and workfunction variation of CG2 has been tested for DMG-CP-TFET.