Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

The high-frequency distortion behavior of integrated silicon bipolar transistors is investigated experimentally and theoretically. Single-tone measurements using an automated setup are performed on transistors with various sizes and of different type, that were fabricated in a state-of-the-art production process offering high-speed and high-voltage transistor versions. The measured data, which were taken on devices laid out in usual high-frequency test pads, are compared to the advanced compact model HICUM showing excellent agreement over input power, bias, and frequency. In addition, a simplified model is used together with a Volterra-series approach to identify the nonlinear effects that are most important at high frequencies.