Molecular Dynamics Simulation on Grinding Process of Cu-Si and Cu-SiO2 Composite Structures

The molecular dynamics (MD) simulation was performed for Cu-Si and Cu-SiO
₂
nano-metric grinding models. The grinding depth and speed were considered to investigate influence of them in grinding. The transformation of the atomic crystal structure of the workpiece during the grinding process was investigated to reveal the material removal mechanism in nano-grinding. The variation of grinding force between the two models was analyzed. The results showed that grinding force was mainly composed of tangential force and normal force. Under the same grinding parameters, the grinding force of the two models changed similarly.