Low Frequency Drain Noise Characterization of Different Technologies of GaN HEMTs:Investigation of Trapping Mechanism

In this paper, we attempt to characterize the low-frequency (LF) drain noise characteristics of 0.25- μ m ultra-short gate length GaN HEMT devices fabricated using different transistor technology. LF drain noise characteristics have been measured using the dedicated test-bench over the frequency range of 100 Hz to 1 MHz and for varying chuck temperatures (Tchuck) ranging between 25 ° C and 125 ° C. The measurement characteristics demonstrate the existence of two traps in both the AlN/GaN and AlGaN/GaN HEMT transistor technologies grown on SiC substrate. Interestingly, no signature of trapping mechanism has been observed in InAlN/GaN HEMT transistor technology.