Approach to electrochemical C-V profiling in semiconductor with sub-Debye-length resolution

Three methods for the determination of the detailed structure of dopant distribution in semiconductors, based on the data of electrochemical C-V profiling, are proposed. The methods give the possibility of determining a dopant distribution directly from a semiconductor surface and providing a sub-Debye length resolution. The results of numerical simulation confirm the possibility of determination of semiconductor dopant profile with nanometer depth resolution.