A Small Signal AC Model Using Scalable Drain Current Equations of AlGaN/GaN MIS Enhancement HEMT

A small signal AC equivalent circuit with scalable drain current equations of AlN/GaN metal-insulator-semiconductor (MIS)-HEMTs has been developed for embedded source field-plate structures. The scalable source field-plate capacitance is included in addition to the dispersion, gate, and drain capacitances. The models are implemented in Verilog-A source codes. The model parameters are extracted from measured data of the G-S-G transistor test structures that we fabricated. The results show good agreements between device measurements and simulations.