Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer

Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage (C/G-V) measurements in the frequency range of 5-500 kHz at room temperature. Voltage-dependent profiles of interface states (N
_ss
) and resistance (R
_i
) were extracted from the C and G data using the low-high-frequency capacitance and Nicollian-Brews methods, respectively. The real and imaginary components of the complex dielectric constant (e', e"), electric modulus (M' and M"), and ac conductivity (σ
_ac
) were calculated from the C and G data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell-Wagner relaxation and N
_ss
. The observed peaks in the N
_ss
-V and R
_i
-V plots can be ascribed by the special distribution of N
_ss
at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca
₃
CO
₄
Ga
_0.001
O
_x
)] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO
₂
at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of N
_ss
and series resistance (R
_s
). The values of σ are almost constant at lower-intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.