Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

The typical characteristics of ultra-thin Zr doped in HfO
₂
as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with V
_P/E
=± 4.8V, and >10
⁹
cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.