A Carrier Stored SOI LIGBT With Ultralow ON-State Voltage and High Current Capability

A novel carrier stored (CS) SOI lateral insulated gate bipolar transistor (LIGBT) with ultralow on-state voltage drop (
${V}_{ \mathrm{\scriptscriptstyle ON}}$
) and high current capability is proposed and its electronic performance is investigated by simulation. The device features the CS layer and the trigate (TG) structure, named TGCS LIGBT. The CS effect in the on-state delivers an ultralow
${V}_{ \mathrm{\scriptscriptstyle ON}}$
. The TG is employed to increase the channel density and modulate the current distribution, further reducing the
${V}_{ \mathrm{\scriptscriptstyle ON}}$
and achieving high current capability. Moreover, TG assists in depleting the highly doped CS layer, which enhances the conductivity modulation and maintains high breakdown voltage. The extended P+ in the comb-shaped P+ region provides a low-resistance hole current path, and thus enhances the latch-up immunity. At the same turn-off loss, the TGCS LIGBT reduces the
${V}_{ \mathrm{\scriptscriptstyle ON}}$
by 32.5% and 36.4% compared with the tridimensional channel (TC) LIGBT and the conventional (Con). LIGBT, respectively. The TGCS LIGBT exhibits high current capability, which has an improvement of 151% and 26.8% compared with those of the Con. LIGBT and the TC LIGBT, respectively. The TGCS LIGBT shows a little better short-circuit capability than does the Con. LIGBT.