Characterization of single-port surface transverse wave resonators in the lower GHz range

This paper presents results from an experimental study on single-port surface transverse wave resonators (STWR) operating in the 1.0 to 2.0 GHz range. The equivalent circuit parameters are extracted in transmission and reflection measurements and compared with data obtained from bulk acoustic wave (BAW) and surface acoustic wave (SAW) based single-port resonators. Operating at much lower frequencies. It is shown that, at GHz frequencies practical single-port STW devices feature extremely low values of the dynamic resistance. On one hand, this results in device Q greatly exceeding the material Q limit for SAW and BAW and on the other hand, it allows the design of simple negative resistance oscillators (NRO) with excellent short term stability, high output power and unprecedented RF/d.c. efficiency.