Investigation of self-heating effect on stacked nanosheet GAA transistors

The self-heating behavior of horizontally stacked gate-all-around (GAA) nanosheet transistor is evaluated to investigate the spatial temperature profile and heat flux distribution considering the simple back-end-of line (BEOL). The impacts of related device geometry and material thermal conductivity are given to provide guidelines for mitigating self-heating effect (SHE) in device design. The results indicate that self-heating in nanoscale device should be attached great importance in achieving robust thermal management and precise reliability prediction.