Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates

Open base breakdown voltage (BV
_CEO
) tuning in Double-Emitter Horizontal Current Bipolar Transistor with floating field plates (FFPs) is analyzed by the device simulations. Tuning is obtained by stepping of the FFPs potential which is controlled via capacitive coupling between neighboring FFPs. When coupled, they serve as the field plates for shaping of the electric potential distribution, introducing the additional drift regions in base-collector depletion region. Breakdown mechanisms in case of partial and complete shielding of the collector E-field by the FFPs are identified. In case of partial shielding, the inner electric field peaks are responsible for breakdown, whereas in the case of complete shielding, breakdown occurs at the outermost drift region. In completely shielded device, very high BV
_CEO
can be obtained by stacking a large number of FFPs. Devices with BV
_CEO
up to 70 V are obtained.