Uniform resistive switching properties of sol-gel multilayered BaTiNiOx memory device

The modification of multilayered barium titanate nickelate (BTN) thin films on ITO/glass substrate is adopted to enhance the device performance. The XPS analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTN layer. In addition, the Ni acts as clusters and plays a critical role in the formation/rupture of cone-shaped conductive paths during resistive switching, which promotes the local alignment of oxygen vacancies among metallic-Ni clusters. Thus, the sol-gel BTN memory devices with high ON/OFF ratio and excellent current distribution can be achieved.