Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

Magneto-electronic (ME) devices based on ferromagnetic (FM)/semiconductor have great potential applications in the magnetic sensor and data-storage industry. The key issues of current research are to find suitable material systems and to develop prototype devices. In this paper, we report on the synthesis of a new epitaxial Fe/InAs based heterostructure and the fabrication of ME devices based on this system.