Magnetoresistance in La/sub 0.7/Sr/sub 0.3/MnO/sub 3-/spl delta// biepitaxial grain boundary junction

The observation of colossal magnetoresistance (CMR) in manganese oxide materials is being generated during the last few years not only for a scientific interests in these metallic oxides but also to apply the magnetic Sensor8 and magnetic recording devices[l]. In this study, we have made special 45 angle grain boundary junction in the CMR layer using the biepitaxial La0.7Sr0.3MnO3-8(LSMO) thin film growing techniques, and investigated the magnetoresistance (MR) properties of LSMO grain boundary junction [2-4].