New observation of gate current in off-state MOSFET

For a gate-controlled p/sup +/-n diode having gate-p/sup +/ overlap area of 3.7*10/sup -4/ cm/sup 2/, the author reports a new observation of the leakage currents through a 235-AA gate oxide. The gate current components both due to Fowler-Nordheim electron funneling through the gate-p/sup +/ overlap oxide and due to hot-electron injections were separately detected. The corresponding gate current was found to be dominated by Fowler-Nordheim electron funneling prior to significant surface avalanche impact ionization.<
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