Psuedo-hall effect and anisotropic magnetoresistance in a mesoscopic Ni/sub 80/Fe/sub 20/ device

Recently, a new type of active device [1] and sensitive low-field magnetic sensors [21 have been developed and fabricated, based on the psuedo-Hall effect (PHE) 131. The advantage of magnetoresistive sensors, based on the PHE rather than on the ordinary anisotropy magnetoresistance (AMR), is that temperature drift can he strongly reduced, which is the main factor limiting the low field performance of magnetoresistive sensors. In this work, we have studied the PHE and AMR in a mesoscopic NI80DE20 device, as well as the relationship between different magneto-transport properties and the lateral shape of the device.