Comparative performance evaluation of temperature dependent characteristics and power converter using GaN, SiC and Si power devices

Power electronics switching devices involving Wide Band Gap (WBG) materials such as, silicon carbide (SiC) and gallium nitride (GaN) provide substantial switching level improvements as compared to the silicon (Si) devices. Their ability to operate at higher voltages, temperatures and frequencies make them highly eligible for use in the future power electronics. In order to provide a comparative analysis of these materials, we studied their various parameters like energy band gap, carrier mobility, saturation velocity and thermal conductivity. A study also has been conducted to analyze and evaluate performance of GaN FET, SiC JFET and Si IGBT based dc-dc buck boost converter. Switching performance and energy dissipation at a variable junction temperature range is compared and evaluated for three power devices. Transistors' switching and conduction losses and their temperature dependency is discussed at the end. The results show that GaN based converter has better switching performance and overall efficiency, but have strong dependency of temperature.