High on-off current modulation ratio investigated at onset voltage for an organic thin film transistor

The performance of a pentacene based organic thin film transistor with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Furthermore, high current modulation ratios of 5×10
⁶
and 7.5×10
⁷
are reported for a lower drain voltage, respectively. These results are very important since current ratio exceeds a value of 10
⁷
is a quite interesting requirement than high mobility for some logic gate applications.