An improved behavioral simulation model for afterpulsing phenomenon

An improved behavioral model for simulating afterpulsing characteristic of single-photon avalanche diodes (SPADs) is introduced. The derived model fully considers the generation and trapping mechanism of carriers, and its important parameters are derived from TCAD simulation instead of empirical formula. The developed SPAD model is implemented in Verilog-A behavioral description language and has been successfully operated on Cadence Spectre simulator. The simulation model can successfully predict the features of afterpulsing phenomenon.