Impact of TID radiation on hot-carrier effects in 65NM bulk Si NMOSFETs

The impact of y-ray exposure on Hot-Carrier effects of 65nm bulk Si NMOSFETs and the dependence on device geometry is experimentally investigated. Experimental results show that stress-induced degradation on irradiated devices is severer than un-irradiated devices. Besides, the geometry dependence of degradation is illustrated: the narrower the device the larger the stress-induced degradation, which is attributed to the radiation-induced trapped charges in STI. The results indicate that the reliability issue of MOS devices is more challenging in harsh environment due to the synergetic effect of TID and HCI.