A technique for fabricating low voltage charge-coupled mosfet with 0.9UM pitch size

The low voltage Charge-Coupled MOSFET with deep-submicron technology is fabricated with extra thick trench oxide process. The extra process module consists of thick oxide growth in trench, resist coating, resist expose to control thick oxide height in trench which would finally affect the break down voltage of the device. The effects of trench length, thickness of the thick trench oxide layer and cell pitch size on the breakdown voltage were discussed in this work. This low voltage Charge-Coupled MOSFET with deep-submicron technology provides an approach to achieve the significantly smaller specific on-resistance at the same break down voltage that obtained on the conventional trench MOSFET by using a greater doping concentration in the drift region.