Influence of AGS Layer Insertion at Absorber/ITO Interface on Structural and Photovoltaic Properties of Ultrathin Cu(In,Ga)Se2 Solar Cells

The insertion of a sulfurized-AgGa (AGS) layer at Cu(In,Ga)Se
₂
(CIGSe)/ITO interface was found effective in improving the PV properties of ~300 nm thick CIGSe (E
_g
≈ 1.5 eV) absorber-based solar cells (deposition time (t
_dep
) = 90 min, substrate temperature (T
_s
) = 490 °C) [1]. This study explores the benefits of the AGS layer when T
_s
and t
_dep
for the CIGSe deposition are 560 °C and 15 min, respectively. The PV properties of a CIGSe solar cell modified with the AGS layer are relatively poor when T
_s
is high and t
_dep
is short.