Cubic phase InxGa1-xN/GaN quantum wells for their application to tandem Solar Cells

In
_x
Ga
_1-x
N/GaN QWs were grown by MBE for tandem solar cell applications. High Indium concentration in the In
_x
Ga
_1-x
N ternary alloy was measured by SIMS, reaching an atomic concentration ~27% corresponding to PL emission at 2.29 eV from the well. The error between the modeled emission of the well and the experimental PL emission was only 30 meV for QW1 and 90 meV for a second well (QW2). Therefore, because of high Indium incorporation, the structure is an attractive candidate to be incorporated as a top material in a tandem solar cell.